Accelerated-Deposition Rate and High-Quality Film Copper Chemical Vapor Deposition Using a Water Vapor Addition to a Hydrogen and Cu(HFA)₂ Reaction System

Abstract

Accelerated-deposition-rate chemical vapor deposition (CVD) of copper is studied using hydrogen reduction of bis-hexafluoro acetylacetonate copper (Cu(HFA) 2 ). An in-situ hydrated Cu(HFA) 2 formation system using gaseous H 2 O addition to the hydrogen carrier gas increases the deposition rate to 90 nm/min. This is about ten times larger than that of the conventional reaction system. It also improves the surface morphology and the electrical resistivity of the deposited copper film. A high-aspect-ratio via filling by selective CVD and excellent step coverage by blanket CVD are successfully obtained with this technique.