Applied Physics Letters · 1975 · 12 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsDiode Laser Threshold CurrentHeterojunctionsHeterostructure DevicesHeterostructure LasersHeterostructure OptoelectronicsLiquid Phase EpitaxySemiconductor Laser Diodes
Heterojunction laser diodes with GaxIn1−xP active layer have been fabricated from GaAs−Ga0.51In0.49P−Ga0.32 Al0.68As−GaAs heterostructures made by liquid phase epitaxy from Ga−rich and In−rich solutions. Stripe−geometry lasers have been operated at 77 K with threshold current densities as low as 2500 A/cm2 with an emission wavelength of λ=638 nm.
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In1−<i>x</i>Ga<i>x</i>P <i>p-n</i> Junction Lasers
H. M. Macksey, N. Holonyak, D. R. Scifres et al. · Applied Physics Letters · 1971 · 35 citations