A Pull‐in Based Test Mechanism for Device Diagnostic and Process Characterization

Abstract

A test technique for capacitive MEMS accelerometers and electrostatic microactuators, based on the measurement of pull‐in voltages and resonance frequency, is described. Using this combination of measurements, one can estimate process‐induced variations in the device layout dimensions as well as deviations from nominal value in material properties, which can be used either for testing or device diagnostics purposes. Measurements performed on fabricated devices confirm that the 250 nm overetch observed on SEM images can be correctly estimated using the proposed technique.