Influence of Cu diffusion conditions on the switching of Cu–SiO2-based resistive memory devices - Concepedia

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Publication | Open Access

Influence of Cu diffusion conditions on the switching of Cu–SiO2-based resistive memory devices

DOI Full Paper Access

86

Citations

14

References

2009

Year

S. Puthen Thermadam, Shekhar Bhagat, T. L. Alford, Yoshifumi Sakaguchi, Michael N. Kozicki, M. Mitkova

Thin Solid Films

Materials ScienceElectrical EngineeringElectronic DevicesEngineeringNanotechnologyEmerging Memory TechnologyApplied PhysicsMemory DeviceMemory DevicesSemiconductor MemoryPhase Change MemoryCu Diffusion Conditions

References

	Year	Citations

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