LEC growth of Te-doped GaSb single crystals with uniform carrier concentration distribution

Growth properties of GaSb: The structure of the residual acceptor centres

Y. J. van der Meulen · Journal of Physics and Chemistry of Solids · 1967 · 161 citations

Natural Sciences, Materials Engineering, Materials Science +8

Ga<inf>1-x</inf>Al<inf>x</inf>Sb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficients

O. Hildebrand, W. Kuebart, K.W. Benz et al. · IEEE Journal of Quantum Electronics · 1981 · 143 citations

Engineering, Electrical Engineering, Materials Science +15

InAs-GaSb superlattices-synthesized semiconductors and semimetals

L. Esaki · Journal of Crystal Growth · 1981 · 56 citations

Natural Sciences, Materials Science, Physics +12

A novel encapsulant material for LEC growth of GaSb

Shintaro Miyazawa, Susumu Kondo, Mitsuru Naganuma · Journal of Crystal Growth · 1980 · 32 citations

Natural Sciences, Materials Engineering, Materials Science +2

Low dislocation density GaSb single crystals grown by LEC technique

Susumu Kondo, Shintaro Miyazawa · Journal of Crystal Growth · 1982 · 24 citations

Natural Sciences, Materials Science, Physics +12