Concepedia

Mitsuru Naganuma

MN

Statistics

Publications

14

Citations

342

H-Index

12

Active since

1975

Affiliations

NTT (Japan)(Current)

Tokyo Institute of Technology

NTT (United States)

Teikyo University of Science

NTT Basic Research Laboratories

Mitsuru Naganuma is an author at NTT (Japan) specializing in materials science, engineering, and semiconductor physics.

Publications per year

1975–2006

14

Publications

14

Ionized Zn doping of GaAs molecular beam epitaxial films

Mitsuru Naganuma, Kiyoshi Takahashi · Applied Physics Letters · 1975 · 61 citations

, , +15

Impact ionization rates in an InGaAs/InAlAs superlattice

Toshiaki Kagawa, Yuichi Kawamura, Hiromitsu Asai et al. · Applied Physics Letters · 1989 · 53 citations

, , +17

Initial Growth Conditions of GaAs on (100) Si Grown by Migration-Enhanced Epitaxy

W. Stolz, Mitsuru Naganuma, Yoshiji Horíkoshi · Japanese Journal of Applied Physics · 1988 · 39 citations

, , +17

A novel encapsulant material for LEC growth of GaSb

Shintaro Miyazawa, Susumu Kondo, Mitsuru Naganuma · Journal of Crystal Growth · 1980 · 32 citations

, , +2

Controlled Formation of Misfit Dislocations for Heteroepitaxial Growth of GaAs on (100) Si by Migration-Enhanced Epitaxy

W. Stolz, Yoshiji Horíkoshi, Mitsuru Naganuma · Japanese Journal of Applied Physics · 1988 · 26 citations

, , +17

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