Hall effect and magnetic properties of III–V based (Ga1−xMnx)As/AlAs magnetic semiconductor superlattices

Abstract

We present magnetotransport properties, with emphasis on Hall effect, of a new class of III–V based magnetic (GaMnAs)/nonmagnetic (AlAs) semiconductor superlattices (SLs) grown by low-temperature molecular beam epitaxy. The SLs having relatively wide (GaMn)As layers (⩾70 Å) are ferromagnetic at low temperatures, and their hole concentrations and Curie temperatures are estimated through the analysis of Hall measurements. The dependence of the magnetic and transport properties on the GaMnAs well width is discussed.