Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulation

Abstract

Two-dimensional electron gas behavior in an AlGaAs/GaAs heterostructure FET has been analyzed using the Monte Carlo method. In the channel region, it is assumed that the electrons are subjected to a two-dimensional scattering process. In the other regions, three-dimensional scattering rates are assumed. It is predicted that, in an actual device with 1.20-µm gate length, the transconductance of 250 and 450 mS/mm can be attained at 300 and 77 K, respectively. More efficient performance is possible with improvements in the device structure.