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Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

DOI

70

Citations

21

References

2001

Year

Daming Huang, Feng Yun, M. A. Reshchikov, D. Wang, H. Morkoç̌, D. L. Rode, L. A. Farina, Çağlıyan Kurdak, K. T. Tsen, S. S. Park,
Solid-State Electronics

References

YearCitations

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