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Growth of high quality a-plane GaN epi-layer on r-plane sapphire substrates with optimization of multi-buffer layer

Wide-bandgap SemiconductorElectrical EngineeringEngineeringR-plane SapphireSurface ScienceApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideMulti-buffer LayerCategoryiii-v SemiconductorOptoelectronics