Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films

Abstract

Defect density dependence on various surface cleaning conditions for molecular beam epitaxial (MBE) silicon films was investigated. Defect-free films were obtained on (100) and (511) wafers, using a combination of ozone cleaning and predeposition process after the usual wet cleaning. On the (111) wafer, the defect density dependence on growth rate was examined. The two-step growth-rate procedure was effective in decreasing stacking faults on the (111) wafer. The difference in defect density between (100) and (111) wafers is also discussed.