Silicon Nitride Thin Film Dielectric

Abstract

Thin adherent nonporous films of pure silicon nitride have been deposited from the vapor phase on hot molybdenum substrates by pyrolytic deposition. Such films, when incorporated between molybdenum plates to form capacitors, were found to maintain satisfactory dielectric properties up to and above 600°C. Silicon nitride coatings, deposited by the method herein described, also offer a convenient and effective method of encapsulation for protecting metal surfaces from atmospheric oxidation up to and above 1000°C.