Publication | Closed Access
Low temperature (≦600°C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays
16
Citations
9
References
1997
Year
Materials ScienceElectrical EngineeringElectronic DevicesEngineeringApplied PhysicsSemiconductor Device FabricationThin Film Process TechnologyThin FilmsElectronic PackagingFlat Panel DisplaysThin Film ProcessingSemiconductor DeviceLow Temperature
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