Electronics Letters · 1981 · 12 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthLaser DiodesLaser PhysicsSemiconductor Crystal GrowthSemiconductor LasersWide-bandgap SemiconductorsLaser Gain MaterialsLaser ThresholdOptical Gain MaterialsTemperature DependenceThreshold Behavior
Room temperature pulsed operation has been achieved in the 1.2–1.3 μm region for GaInAsP/InP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.2 kA/cm2 and threshold temperature dependences of exp T/T0, with T0 up to 80 K, have been obtained.