Ar ion-beam etching characteristics and damage production in InP

Abstract

Sputtering yield characteristics of Ar ion-beam etching on InP have been determined. Damage generated by ion-beam bombardment has also been investigated by using scanning electron microscopy, photoluminescence and Auger electron spectroscopy. A two-dimensionally non-uniform surface structure which consists, in the depth direction, of a non-stoichiometric surface layer followed by a region involving nonradiative recombination centres, has been revealed from these measurements.