Publication | Closed Access
Impact of die-to-die and within-die parameter fluctuations on the maximum clock frequency distribution for gigascale integration
744
Citations
17
References
2002
Year
EngineeringVlsi DesignFmax MeanComputer ArchitecturePhysical Design (Electronics)Advanced Packaging (Semiconductors)Clock RecoveryTiming AnalysisMixed-signal Integrated CircuitMaximum Clock FrequencyElectronic PackagingGigascale IntegrationElectrical EngineeringHardware ReliabilityPhysicsHigh-frequency DeviceComputer EngineeringWithin-die Parameter FluctuationsMicroelectronicsFmax Variance
The authors derive a model for the maximum clock frequency distribution of a microprocessor, validate it against wafer‑sort data for a 0.25‑µm device, and use rigorously derived device and circuit models to forecast how die‑to‑die and within‑die parameter fluctuations will affect FMAX distributions across 180‑ to 50‑nm technology generations. The model closely matches measured FMAX data and shows that within‑die fluctuations mainly shift the mean while die‑to‑die variations dominate the variance; predictions indicate that systematic within‑die fluctuations can erase a generation of performance gain at 50‑nm, underscoring the need to target process controls and design methods to suppress these fluctuations.
A model describing the maximum clock frequency (FMAX) distribution of a microprocessor is derived and compared with wafer sort data for a recent 0.25-/spl mu/m microprocessor. The model agrees closely with measured data in mean, variance, and shape. Results demonstrate that within-die fluctuations primarily impact the FMAX mean and die-to-die fluctuations determine the majority of the FMAX variance. Employing rigorously derived device and circuit models, the impact of die-to-die and within-die parameter fluctuations on future FMAX distributions is forecast for the 180, 130, 100, 70, and 50-nm technology generations. Model predictions reveal that systematic within-die fluctuations impose the largest performance degradation resulting from parameter fluctuations. Assuming a 3/spl sigma/ channel length deviation of 20%, projections for the 50-nm technology generation indicate that essentially a generation of performance gain can be lost due to systematic within-die fluctuations. Key insights from this work elucidate the recommendations that manufacturing process controls be targeted specifically toward sources of systematic within-die fluctuations, and the development of new circuit design methodologies be aimed at suppressing the effect of within-die parameter fluctuations.
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