Interference photolithography with the use of resists on the basis of chalcogenide glassy semiconductors

Abstract

The use of chalcogenide glassy semiconductors as an inorganic vacuum photoresist to obtain periodic relief structures on substrates of various compositions is investigated. It is shown that a chalcogenide resist can be successfully used in combination with interference lithography (including the immersion one) to form one- and two-dimensional submicron-size periodic structures with a spatial frequency of 300 to 8000 mm−1. Technological processes of obtaining relief structures and lithographic masks with submicron sizes of elements on semiconductor, dielectric and metal substrates are developed, and their possible applications are described.