Electronics Letters · 1993 · 26 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave Semiconductor DevicesWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown MechanismsBreakdown StrengthBreakdown VoltageFrequency MultipliersHigh-frequency ElectronicsHigh-voltage BreakdownJunction BreakdownVaractor Diodes
Data are presented on single quantum barrier AlAs/In0.33Ga0.47As varactor diodes intended as submillimetre wavelength frequency multipliers that exhibit extremely high breakdown voltage and excellent capacitance modulation characteristics. Record breakdown voltages as high as 12 V were achieved with a composite 50 Å/50 Å/50 Å thick In0.52Al0.48/AlAs/In0.52Al0.48As barrier sandwiched between 3000 Å (1.2 × 1017cm-3) In0.53Ga0.47As depletion regions.