Japanese Journal of Applied Physics · 1976 · 14 citations · 1 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsCrystal GrowthCrystallographyEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor SurfacesThin-film MaterialsEpitaxial Film GrowthEpitaxial MaterialsEpitaxial Thin FilmsEpitaxial Thin-film GrowthFacetingMolecular Beam EpitaxyPhotoluminescent MaterialsSubstrate Orientation Effects
InP thin crystalline films were grown on (100)-oriented GaAs by molecular beam epitaxy (MBE) and evaluated by RHEED, SEM and IMA. Thin films with high crystalline quality were obtained when the substrate temperature was about 240°C and temperatures of In and P cells were 840∼880°C and 370∼400°C, respectively. Furthermore, Sn atoms were easily doped into InP during MBE growth, and the surface morphology of InP was greatly improved by Sn doping.
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