Vapor-phase silanization of oxidized porous silicon for stabilizing composition and photoluminescence

Abstract

A vapor-phase deposition approach to the silanization modification of the oxidized porous silicon (PSi) surface using (CH3O)3Si(CH2)3NH2 has been exploited. Standard clean (SC)-1 (NH3H2O/H2O2/H2O, 1:1:5,v/v) and SC-2 [HCl/H2O2/H2O (1:1:6,v/v)] solutions are utilized for the first time to obtain oxidized PSi and have been proved to be a very efficient combination for creating Si–OH species on the PSi surface. After the modification, an amine group terminated surface was successfully created as demonstrated by the contact angle with water, the x-ray photoelectron spectroscopy, and the Fourier transform infrared (FTIR) spectra. The influences of the surface derivatives on the composition stability of the PSi layer and on its photoluminescence properties were investigated by means of FTIR spectra, photoluminescence spectra, and time-resolved photoluminescence measurements.