Publication | Closed Access
Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
68
Citations
30
References
2010
Year
Materials ScienceGrowth CharacteristicsElectrical EngineeringEngineeringLa2o3 Gate OxidesOxide ElectronicsApplied PhysicsGallium OxideMolecular Beam EpitaxyEpitaxial GrowthElectrical PropertiesChemical Vapor Deposition
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