Field-effect transistors on rubrene single crystals with parylene gate insulator

Abstract

We report on the fabrication and characterization of the organic field-effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field-effect mobility 0.1–1 cm2/V s and the on/off ratio⩾104. The temperature dependence of the mobility is discussed.