Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation

Abstract

Low temperature growth of germanium (Ge) on silicon dioxide is demonstrated using a diborane pretreatment technique. Using and precursors, layers are deposited on to seed the chemical vapor deposition growth of Ge films. In the system, the binary deposition mechanism of the film is explained by the "enhancement" model. In situ doping of Ge films is also investigated. In situ boron activation is achieved during the crystallization of the Ge films at . Device applicability of the doped Ge film growth on oxide is demonstrated in a low temperature Si p-channel metal-oxide-semiconductor field-effect transistor, in which the Ge layer is used as a gate electrode. The low temperature Ge growth technique can be used for low thermal budget processes, e.g., monolithic three-dimensional integrated circuits.