Control of threshold voltage in low-voltage organic complementary inverter circuits with floating gate structures

Abstract

We have demonstrated threshold-voltage control of p- and n-channel organic transistors with a floating-gate structure and self-assembled monolayer-based gate dielectrics and applied this technique to tune the switching voltage of organic complementary inverters. The threshold voltages of the p- and n-channel transistors are changed independently and systematically across a wide range from +2.4 to –1 V and from –0.3 to +1.5 V, respectively, when the program voltages of –6 V and +6 V are applied to the p- and n-channel transistors, respectively. Furthermore, we fabricated tunable organic complementary inverters, and ring oscillators whose oscillations are controlled by varying floating-gate charges.