Laser induced fluorescence detection of CF and CF2 radicals in a CF4/O2 plasma

Abstract

Laser induced fluorescence has been used to detect ground-state CF and CF2 radicals in a CF4/O2 plasma etching reactor. Measurements are reported of the spatial variation of CF2 concentrations, of the CF radical rotational state distributions, and of the variation of both species with O2 content of the plasma.