Uniaxial stress measurements on the 0.97 eV line in irradiated silicon

Abstract

Measurements of the effects of uniaxial stress on the 0.97 eV line in both absorption and luminescence are reported and the symmetry of the centre is established as monoclinic I. The relative intensities of the stress-split components vary with stress as a result of preferential population of the inequivalent populations under stress.