Recent progress in scaling InP HEMT TMIC technology to 850 GHz

Abstract

In this paper, recent work on pushing InP HEMT amplifier technology to 850 GHz is reported. In particular, we have demonstrated on-wafer gain at this frequency. To our knowledge, this is the first time gain has been reported at this frequency. This achievement is possible by transistor scaling, frontside and backside feature scaling and detailed transistor modeling and design.