Concepedia

High-performance InAlAs/InGaAs HEMTs and MESFETs

A. Fathimulla, J.R. ABRAHAMS, Tom Loughran, H. Hier

IEEE Electron Device Letters · 1988 · 41 citations · 5 references

Abstract

The fabrication and microwave performance of heterostructure InAlAs/InGaAs HEMTs (high-electron-mobility transistors) and MESFETs are described. Maximum stable gains of 14.3 dB for a HEMT and 12 dB for a MESFET at 26.5 GHz have been achieved. These are believed to be record gains for FETs having gates as long as 0.7 mu m.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

References

5

Real-space electron transfer by thermionic emission in GaAsAlxGa1−xAs heterostructures: Analytical model for large layer widths

H. Shichijo, K. Hess, B. G. Streetman · Solid-State Electronics · 1980 · 54 citations

Engineering, Electrical Engineering, Physics +17

Microwave performance of InAlAs/InGaAs/InP MODFET's

C. K. Peng, M.I. Aksun, A. Ketterson et al. · IEEE Electron Device Letters · 1987 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

Composition dependence of Au/In<i>x</i>Al1−<i>x</i>As Schottky barrier heights

Chia‐Liang Lin, Paul K. Chu, Albert L. Kellner et al. · Applied Physics Letters · 1986 · 52 citations

Engineering, Materials Engineering, Materials Science +17

High-transconductance AlInAs/GaInAs HIFETs grown by MOCVD

M. Kamada, Tsutomu Kobayashi, Hiroshi Ishikawa et al. · Electronics Letters · 1987 · 25 citations

Engineering, Electrical Engineering, Materials Science +15

Heterojunction InAlAs/InP MESFETs grown by OMVPE

M.A. Fathimulla, Tom Loughran, Lisa Stecker et al. · IEEE Electron Device Letters · 1988 · 18 citations

Engineering, Electrical Engineering, Materials Science +14