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SOI technology using buried layers of oxidized porous Si
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1987
Year
Materials ScienceSemiconductor TechnologySoi TechnologyEngineeringCrystalline DefectsSurface ScienceApplied PhysicsFull OxidationSemiconductor Device FabricationIntegrated CircuitsCmos DevicesMicroelectronicsPlasma EtchingPorous SiliconSilicon On InsulatorSemiconductor Device
Porous silicon was formed in the highly doped layers of an n/n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> /n structure. After full oxidation of porous silicon, CMOS devices were fabricated in insulated single-crystal silicon islands. Mobilities comparable to bulk silicon are measured, and low-leakage junctions are realized.