Optically Detected Magnetic Resonance Study of a Type-ii GaAs-AlAs Multiple Quantum Well

Abstract

In a type-II GaAs-AlAs multiple quantum well three optically detected magnetic resonance lines and two level anticrossings were observed. Two of the resonance lines and the two level anticrossings are in agreement with the electronic level scheme of the heavy-hole exciton. The third resonance line is in accordance with a magnetic spin resonance of an unbound electron. These optically detected magnetic resonance measurements open up the possibility to obtain detailed information about the excitons in and the band structure of type-II quantum wells.