Publication | Closed Access
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2O3 on freshly molecular beam epitaxy grown GaAs
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Citations
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References
2010
Year
Materials ScienceAluminium NitrideElectrical EngineeringEngineeringSurface ScienceApplied PhysicsGallium OxideMolecular Beam EpitaxyEpitaxial GrowthElectrical PropertiesCompound SemiconductorSitu Atomic Layer
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