Electrical properties of thermally stable LaB6/GaAs Schottky diodes

Abstract

Electrical properties of LaB6/GaAs(001) Schottky diodes have been studied by current-voltage measurements. The diodes were made by depositing LaB6 on chemically etched GaAs and molecular beam epitaxy prepared GaAs-c(4×4) surfaces by electron beam evaporation. The barrier height and ideality factor show appropriate values for metal-semiconductor field-effect-semiconductor application and do not change much by high-temperature annealing. These results provide firm evidence that LaB6 is a very promising candidate for self-aligned gate material of GaAs integrated circuits.