Nanoscale molybdenum gates fabricated by low damage inductively coupled plasma SF6/C4F8 etching suitable for high performance compound semiconductor transistors - Concepedia

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Nanoscale molybdenum gates fabricated by low damage inductively coupled plasma SF6/C4F8 etching suitable for high performance compound semiconductor transistors

10

Citations

10

References

2015

Year

Menglin Cao, Xu Li, M. Missous, Iain Thayne

Microelectronic Engineering

Materials ScienceElectrical EngineeringEngineeringLow DamageNanoelectronicsNanotechnologyApplied PhysicsSemiconductor Device FabricationMicroelectronicsPlasma EtchingNanoscale Molybdenum GatesPlasma Sf6/c4f8Semiconductor Device

References

	Year	Citations

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