Applied Physics Letters · 2008 · 92 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsPhotonicsSemiconductor DevicesPhotovoltaic DevicesSemiconductor DefectsSilicon MaterialsSolar Cell MaterialsSolar CellsSolar Photovoltaic SystemsAnnealingAnnealing KineticsAnnealing Temperature EffectsDefect AnnealingPoint DefectsSilicon AnnealingSilicon ImpuritiesSilicon Solar Cells
In this work, we propose and demonstrate an annealing procedure designed to improve the performance of iron-contaminated silicon solar cells. Specifically, we put forward the idea that cells contaminated with iron should be annealed at appropriate times and temperatures to allow for the transformation from supersaturated point defects to distributed iron silicide precipitates. We examine the optimal transformation rate for string ribbon multicrystalline silicon and demonstrate that a 30min annealing can improve the efficiency of cells manufactured from low-purity feedstock.
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Iron and its complexes in silicon
A. A. Istratov, H. Hieslmair, E. R. Weber · Applied Physics A · 1999 · 536 citations
Iron contamination in silicon technology
A. A. Istratov, H. Hieslmair, E. R. Weber · Applied Physics A · 2000 · 340 citations
Engineering metal-impurity nanodefects for low-cost solar cells
Tonio Buonassisi, A. A. Istratov, Matthew A. Marcus et al. · Nature Materials · 2005 · 198 citations
Transition-metal profiles in a multicrystalline silicon ingot
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