Geometric and Electronic Structures of Terbium−Silicon Mixed Clusters (TbSi<i>_n</i>; 6 ≤ <i>n </i>≤ 16)

Abstract

The geometric and the electronic structures of terbium−silicon anions, TbSi n - (6 ≤ n ≤ 16) were investigated by using photoelectron spectroscopy (PES) and a chemical-probe method. The clusters were produced by a double-rod laser vaporization technique. From trends observed in the electron affinities (EAs), the TbSi n - clusters were categorized into three groups of (I) 6 ≤ n ≤ 9, (II) n = 10, 11, and (III) n ≥ 12. Together with adsorption reactivity toward H 2 O it is concluded that a Tb atom is encapsulated inside a Si n cage at n ≥ 10; Tb@Si n .