Pinhole formation in solid phase epitaxial film of CoSi2 on Si(111)

Abstract

The long-standing pinhole problem in solid phase epitaxial growth of a CoSi2 film on Si(111) has been revisited with in situ scanning tunneling microscopy. While the as-deposited film with 5 Å of Co at room temperature shows a smooth granular texture with original substrate terraces remaining intact, annealing at 580 °C produces an epitaxial CoSi2 film with large pinholes enclosed by a thin ring CoSi2, exhibiting a volcano feature. Quantitative analysis shows that the formation of pinholes is a result of rapid Si outward diffusion from bulk to surface, and of the subsequent Si reaction with Co on the outer surface. Evidence suggests that inhibiting the Si diffusion channels during the thermal annealing process is the key to solving the pinhole problem.