High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor - Concepedia

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High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

DOI Full Paper Access

48

Citations

30

References

2010

Year

Iftekhar Chowdhury, MVS Chandrasekhar, P. B. Klein, Joshua D. Caldwell, Tangali S. Sudarshan

Journal of Crystal Growth

Materials EngineeringEngineeringHot-wall Cvd ReactorApplied PhysicsChemical Vapor DepositionCarbide

References

	Year	Citations

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