700V thin SOI-LIGBT with high current capability

Abstract

The tridimensional channel SOI-LIGBT on 1.5μm thin SOI layer is developed in this paper. The key feature of the device is that there are numerous separated P-body cells located in the emitter region, which can increase the efficient channel width, enhance electron injection and attain a large current capability. The proposed SOI-LIGBT exhibits the current density of 150A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which has an improvement of 150% compared with the conventional structure. The SOI-LIGBT structure can be well applied in high voltage integrated circuit (HVIC).