Publication | Open Access
Cooper Pair Cotunneling in Single Charge Transistors with Dissipative Electromagnetic Environment
30
Citations
19
References
2003
Year
Superconducting MaterialEngineeringCharge TransportCooper PairElectromagnetic CompatibilitySemiconductor DeviceJosephson JunctionsNanoelectronicsElectronic EngineeringSuperconductivitySuperconducting DevicesElectrical EngineeringHigh-tc SuperconductivityPhysicsTransistor IslandBias Temperature InstabilityDissipative Electromagnetic EnvironmentMicroelectronicsCooper Pair CotunnelingSingle Charge TransistorsApplied Physics
We observed current-voltage characteristics of superconducting single charge transistors with on-chip resistors of R approximately R(Q)=h/4e(2) approximately 6.45 kOmega, which are explained in terms of Cooper pair cotunneling. Both the effective strength of Josephson coupling and the cotunneling current are modulated by the gate-induced charge on the transistor island. For increasing values of the resistance R we found the Cooper pair current at small transport voltages to be dramatically suppressed.
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