S. V. Lotkhov

Background charge noise in metallic single-electron tunneling devices

A. B. Zorin, F. J. Ahlers, J. Niemeyer et al. · Physical review. B, Condensed matter · 1996 · 243 citations

Categoryquantum Electronics, Electrical Engineering, Engineering +13

Operation of a three-junction single-electron pump with on-chip resistors

S. V. Lotkhov, S. A. Bogoslovsky, A. B. Zorin et al. · Applied Physics Letters · 2001 · 92 citations · Full text

Low-power Electronics, Electrical Engineering, Engineering +12

The single electron R-pump: first experiment

S. V. Lotkhov, S. A. Bogoslovsky, A. B. Zorin et al. · arXiv (Cornell University) · 2000 · 60 citations · Full text

Excitation of Single Quasiparticles in a Small Superconducting Al Island Connected to Normal-Metal Leads by Tunnel Junctions

V. F. Maisi, S. V. Lotkhov, A. Kemppinen et al. · Physical Review Letters · 2013 · 46 citations · Full text

Superconducting Material, Engineering, Tunnel Junctions +16

Investigation of the offset charge noise in single electron tunneling devices

H. Wolf, F. J. Ahlers, J. Niemeyer et al. · IEEE Transactions on Instrumentation and Measurement · 1997 · 36 citations

Electrical Engineering, Engineering, Tunneling Microscopy +12