Current controlled random-access memory based on magnetic vortex handedness

TLDR

Theoretical foundations for nonvolatile memory using magnetic vortices are established. The study proposes a vortex random‑access memory (VRAM) realized with vortex cells controlled solely by alternating currents. The VRAM uses vortex handedness—the product of chirality and polarization—as a bit, enabling direct read/write via alternating currents. The scheme transfers the vortex to a clear binary state in subnanosecond timescales and remains stable at room temperature.

Abstract

The theoretical foundation for a nonvolatile memory device based on magnetic vortices is presented. We propose a realization of a vortex random-access memory (VRAM) containing vortex cells that are controlled by alternating currents only. The proposed scheme allows to transfer the vortex into an unambiguous binary state regardless of its initial state within a subnanosecond time scale. The vortex handedness defined as the product of chirality and polarization as a bit representation allows direct mechanisms for reading and writing the bit information. The VRAM is stable at room temperature.