Applied Physics Letters · 2008 · 193 citations · 25 references
Natural SciencesElectrical EngineeringPhysicsCondensed Matter PhysicsMagnetic MaterialsMemoryMagnetic Recording MaterialsMemory DevicesMemory StorageMemory SystemsSpintronicsVortex DynamicsBinary State EncodingMagnetoresistive Random-access MemoryNonvolatile MemoryNonvolatile Memory DevicesNonvolatile Memory MaterialsRandom Access Memory (Ram)Random-access MemoryRoom Temperature Stability
Theoretical foundations for nonvolatile memory using magnetic vortices are established. The study proposes a vortex random‑access memory (VRAM) realized with vortex cells controlled solely by alternating currents. The VRAM uses vortex handedness—the product of chirality and polarization—as a bit, enabling direct read/write via alternating currents. The scheme transfers the vortex to a clear binary state in subnanosecond timescales and remains stable at room temperature.
The theoretical foundation for a nonvolatile memory device based on magnetic vortices is presented. We propose a realization of a vortex random-access memory (VRAM) containing vortex cells that are controlled by alternating currents only. The proposed scheme allows to transfer the vortex into an unambiguous binary state regardless of its initial state within a subnanosecond time scale. The vortex handedness defined as the product of chirality and polarization as a bit representation allows direct mechanisms for reading and writing the bit information. The VRAM is stable at room temperature.
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Direct Observation of Internal Spin Structure of Magnetic Vortex Cores
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Magnetic vortex core reversal by excitation with short bursts of an alternating field
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