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Proton and electron radiation data and analysis of GaInP<sub>2</sub>/GaAs/Ge solar cells
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References
2002
Year
EngineeringRadiation EffectRadiation ExposureDisplacement Damage DoseRadiation DataPhotovoltaicsRadiation ProtectionElectron SpectroscopySolar Cell StructuresRadiation OncologyGainp 2Compound SemiconductorHealth SciencesSemiconductor TechnologySolar Physics (Heliophysics)Electrical EngineeringPhysicsSolar Physics (Solar Energy Conversion)Electron Radiation DataApplied PhysicsSolar Cell Materials
Abstract We present electron and proton radiation data for our GaInP 2 /GaAs/Ge triple‐junction solar cell. An analysis of the data is also done with both the relative damage coefficients (RDC) method developed at NASA‐JPL, as well as the displacement damage dose (D 3 ) method developed by the Naval Research Laboratory. We also discuss radiation tolerance of cells in the light of our development of an advanced triple‐junction cell. Copyright © 2002 John Wiley & Sons, Ltd.
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2002 | 77 | |
2002 | 22 |
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