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Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium–zinc oxide thin film transistors

Semiconductor TechnologyElectrical EngineeringEngineeringGate Bias DependenceOxide ElectronicsApplied PhysicsSemiconductor MaterialsSemiconductor MaterialThin FilmsCharge Carrier TransportThin Film TransistorsCarrier Transport MechanismsSemiconductor Device