Applied Physics Letters · 1991 · 20 citations · 14 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsDislocations In SemiconductorsEpitaxial GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsStrain EngineeringHigh-resolution Electron MicroscopyHigh-resolution Transmission Electron MicroscopyStrain EffectsStrained Layer StructuresStrained-layer HeterostructuresSuperlattice GrowthSuperlattice MaterialsTransmission Electron Microscopy Of Dislocations
CdTe-ZnTe strained-layer superlattices (SLSs) were grown on GaAs by hot-wall epitaxy. The individual layer thickness of the SLS is well controlled and the thickness fluctuation is less than ±1 monolayer. High-resolution transmission electron microscopy images show coherent SLS growth. We found that two-thirds of the threading dislocations can be reduced by inserting the SLS in CdTe/GaAs.
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A. Lopez‐Otero · Thin Solid Films · 1978 · 420 citations
Dislocation reduction in epitaxial GaAs on Si(100)
R. Fischer, D. Neuman, H. Zabel et al. · Applied Physics Letters · 1986 · 198 citations
CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterization
J. P. Faurie, C. Hsu, S. Sivananthan et al. · Surface Science Letters · 1986 · 97 citations