Basic Mechanisms in Plasma Etching

Abstract

Abstract A summary is given on the temperature dependence and basic processes in dry etching. The basic processes as Physical and Chemical Sputtering and Surface Film Etching completed by ion or electron stimulation of gas‐surface reactions and combined with adsorption and desorption are used in modelling different types of etch characteristics. Of special interest are non‐monotoneous characteristics. For some typical examples a comparison between measured and calculated curves is given which permit the determination of some kinetic parameters as activation energies and residence times.