IEEE Transactions on Electron Devices · 1969 · 15 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSensorsDevice CharacterizationDevice ModelingTemperature MeasurementThermal ManagementThermal Properties Of SemiconductorsThermal SensorsBiasesHot Carrier EffectsHot Spot FormationThermal Effects In Integrated CircuitsThermal Management Of Semiconductor DevicesThermal Resistance Modeling
By the application of an infrared radiometer as the sensor, hot-spot formation is detected and a hot-spot thermal resistance is calculated. Hot-spot formation for both forward- and reverse-biased second breakdown is analyzed. Pulsed dc techniques are used in the investigation, allowing a wide range of possible operating biases to be applied.
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