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Electron correlation in Si studied by high-resolution<i>KLV</i>Auger spectroscopy
17
Citations
26
References
1993
Year
Electron CorrelationHeavy Ion PhysicEngineeringKlv Auger SpectraPhysicsElectron SpectroscopyNatural SciencesSpectroscopyApplied PhysicsCondensed Matter PhysicsAtomic PhysicsComputational ChemistryQuantum ChemistrySynchrotron RadiationIon EmissionAuger ProfilesIon Structure
High-resolution measurements show that the KLV Auger spectra of Si have a three-peaked structure. The experimental results are compared with calculations of the Auger profiles based on results for the local screened density of states (DOS) on a core-ionized site obtained from two theoretical approaches; self-consistent calculations within the linear-muffin-tin-orbital--atomic-spheres-approximation scheme and a parametrization of the ground-state DOS. Both approaches reproduce the three-peaked structure of the KLV spectral profiles but give results which are less bound than experiment. It is argued that the discrepancies between theory and experiment point to the need for a more sophisticated theory of electron correlation in Si.
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