Energy dependence of transient enhanced diffusion and defect kinetics

Abstract

Boron, a p-type dopant, experiences transient enhanced diffusion (TED) via interstitials. The boron TED and {311} dissolution rates are explored as a function of implant energy dependence. Silicon implants of 1014/cm2 at various energies were used to damage the surface of a wafer with an epitaxially grown boron marker layer. Samples were annealed at 750 °C for 15–135 min to observe the diffusion exhibited by the marker layer and to correlate this with the dissolution of {311} type defects. The diffusion enhancement depends strongly on implant energy but the {311} dissolution rate is weakly dependent.