Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

Abstract

The self-heating effect on the drain current transient response in AlGaN/GaN high electron mobility transistors (HEMTs) was investigated experimentally. Two steps were observed as the drain current dropped with time. The relationship between the transient temperature rise in the channel and the drop in the drain current are discussed in detail. The decrease in the transient drain current and the rise in the channel transient temperature had a complementary relationship. The decrease in the channel electron mobility, caused by self-heating, was an important factor in the drain current drop in the AlGaN/GaN HEMTs.