Physical review. B, Condensed matter · 1992 · 59 citations · 19 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsDopingIii-v SemiconductorsOptical Properties Of SemiconductorsSemiconductor PhysicsThermal Properties Of SemiconductorsUltrafast OpticsCarrier RelaxationCarrier Relaxation DynamicsElectron-phonon ScatteringPhonon ScatteringPhotocarrier DynamicsTime ResolutionUltrafast Carrier DynamicsUltrafast Electron Dynamics
We present time-resolved measurements of the relaxation of photoexcited holes in n-doped GaAs and InP with 100 fs time resolution. The band-edge luminescence is predominantly controlled by the hole dynamics, when the optical excitation density is much lower than the doping density. Information on the electron-hole scattering and hole-phonon scattering rates is obtained by varying the doping density. Thermal equilibrium between hot holes and lattice is found to be established on a subpicosecond time scale.
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Negative dispersion using pairs of prisms
R. L. Fork, Oscar E. Martínez, J. P. Gordon · Optics Letters · 1984 · 934 citations
Natural Sciences, Physics, Optics +16
Energy-Loss Rates for Hot Electrons and Holes in GaAs Quantum Wells
Jagdeep Shah, A. Pinczuk, A. C. Gossard et al. · Physical Review Letters · 1985 · 397 citations